CBR10F-J010 vs CBR10-J010 feature comparison

CBR10F-J010 Central Semiconductor Corp

Buy Now Datasheet

CBR10-J010 Central Semiconductor Corp

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.2 V
JESD-30 Code S-PUFM-W4 S-PUFM-W4
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 10 A 10 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE SQUARE
Package Style FLANGE MOUNT FLANGE MOUNT
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.2 µs
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position UPPER UPPER
Base Number Matches 2 3
Package Description CASE CM
Pin Count 4
Manufacturer Package Code CASE CM
Samacsys Manufacturer Central Semiconductor
Breakdown Voltage-Min 100 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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