CBR1F-D020S
vs
CBR1F-D020SBK
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Part Package Code |
DIP
|
|
Package Description |
SMDIP-4
|
R-PDSO-G4
|
Pin Count |
4
|
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Breakdown Voltage-Min |
200 V
|
200 V
|
Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.3 V
|
1.3 V
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e0
|
e0
|
Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
Number of Elements |
4
|
4
|
Number of Phases |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-65 °C
|
|
Output Current-Max |
1 A
|
1 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rep Pk Reverse Voltage-Max |
200 V
|
200 V
|
Reverse Current-Max |
5 µA
|
0.00001 µA
|
Reverse Recovery Time-Max |
0.2 µs
|
0.2 µs
|
Reverse Test Voltage |
200 V
|
|
Surface Mount |
YES
|
YES
|
Technology |
SCHOTTKY
|
|
Terminal Finish |
Tin/Lead (Sn80Pb20)
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Base Number Matches |
7
|
2
|
|
|
|
Compare CBR1F-D020S with alternatives
Compare CBR1F-D020SBK with alternatives