DB101 vs DI100S_R2_10001 feature comparison

DB101 Galaxy Microelectronics

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DI100S_R2_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO YES
Base Number Matches 6 2
Package Description DIP-4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard UL RECOGNIZED
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

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