DB101S vs FDB101 feature comparison

DB101S Formosa Microsemi Co Ltd

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FDB101 Galaxy Semi-Conductor Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer FORMOSA MICROSEMI CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDSO-G4
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount YES NO
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 20 2
Breakdown Voltage-Min 50 V

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