DB154S vs EDB102S feature comparison

DB154S Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet

EDB102S Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PDSO-G4
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1.5 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Rep Pk Reverse Voltage-Max 400 V 100 V
Reverse Current-Max 10 µA
Reverse Test Voltage 400 V
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Base Number Matches 16 3
Breakdown Voltage-Min 100 V
Peak Reflow Temperature (Cel) 260
Reverse Recovery Time-Max 0.05 µs

Compare EDB102S with alternatives