DBL151GC1G vs DB151G feature comparison

DBL151GC1G Taiwan Semiconductor

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DB151G Bytesonic Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD BYTESONIC ELECTRONICS CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDIP-T4 R-PDIP-T4
JESD-609 Code e3
Non-rep Pk Forward Current-Max 50 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Reference Standard AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 5
Reverse Current-Max 10 µA
Reverse Test Voltage 50 V

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