DBS151G vs DF15005M feature comparison

DBS151G Taiwan Semiconductor

Buy Now Datasheet

DF15005M Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount YES NO
Base Number Matches 1 1

Compare DBS151G with alternatives

Compare DF15005M with alternatives