DF08S
vs
DF08S-T3
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
| Package Description |
SDIP-4
|
R-PDSO-G4
|
| Manufacturer Package Code |
709AE
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.80
|
|
| Factory Lead Time |
31 Weeks, 4 Days
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Breakdown Voltage-Min |
800 V
|
800 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1.1 V
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
50 A
|
30 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Output Current-Max |
1.5 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
3.1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn) - annealed
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
3
|
1
|
| Rohs Code |
|
No
|
|
|
|
Compare DF08S with alternatives
Compare DF08S-T3 with alternatives