DF15005M vs HDBL151G feature comparison

DF15005M Galaxy Microelectronics

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HDBL151G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Base Number Matches 4 1
JESD-609 Code e3
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 10

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Compare HDBL151G with alternatives