DF1506ST-G vs KBP155GC2G feature comparison

DF1506ST-G Comchip Technology Corporation Ltd

Buy Now Datasheet

KBP155GC2G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-G4 R-PSIP-W4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Breakdown Voltage-Min 600 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDSO-G4 R-PSIP-W4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 260
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
JESD-609 Code e3
Terminal Finish MATTE TIN

Compare DF1506ST-G with alternatives

Compare KBP155GC2G with alternatives