DF156S-G
vs
EDB102S
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
| Package Description |
R-PDSO-G4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Breakdown Voltage-Min |
600 V
|
100 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
1 V
|
| JESD-30 Code |
R-PDSO-G4
|
|
| Non-rep Pk Forward Current-Max |
50 A
|
30 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
4
|
|
| Output Current-Max |
1.5 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
UL RECOGNIZED
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
100 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Reverse Recovery Time-Max |
|
0.05 µs
|
|
|
|
Compare DF156S-G with alternatives
Compare EDB102S with alternatives