DLE30E vs 1N5404/G feature comparison

DLE30E Galaxy Microelectronics

Buy Now Datasheet

1N5404/G RFE International Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD RFE INTERNATIONAL INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1 V
Non-rep Pk Forward Current-Max 150 A 150 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Recovery Time-Max 0.035 µs
Surface Mount NO NO
Base Number Matches 1 2
Diode Element Material SILICON

Compare DLE30E with alternatives

Compare 1N5404/G with alternatives