EBE51UD8ABFA-4A vs M378T6464QH3-CE6 feature comparison

EBE51UD8ABFA-4A Micron Technology Inc

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M378T6464QH3-CE6 Samsung Semiconductor

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC SAMSUNG SEMICONDUCTOR INC
Package Description DIMM, DIMM240,40 DIMM, DIMM240,40
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.6 ns 0.45 ns
Clock Frequency-Max (fCLK) 200 MHz 333 MHz
I/O Type COMMON COMMON
JESD-30 Code R-PDMA-N240 R-XDMA-N240
Memory Density 4294967296 bit 4294967296 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Terminals 240 240
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Temperature-Max 70 °C 95 °C
Operating Temperature-Min
Organization 64MX64 64MX64
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM240,40 DIMM240,40
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Form NO LEAD NO LEAD
Terminal Pitch 1 mm 1 mm
Terminal Position DUAL DUAL
Base Number Matches 2 1
Part Package Code DIMM
Pin Count 240
Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Peak Reflow Temperature (Cel) 260
Self Refresh YES
Standby Current-Max 0.06 A
Supply Current-Max 0.98 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V

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