EDE2516AASE-6E-E
vs
K4N56163QF-ZC2A
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ELPIDA MEMORY INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
TFBGA,
|
TFBGA, BGA84,9X15,32
|
| Pin Count |
84
|
84
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.24
|
8542.32.00.24
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
0.45 ns
|
0.45 ns
|
| Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
| Length |
13.8 mm
|
13 mm
|
| Memory Density |
268435456 bit
|
268435456 bit
|
| Memory IC Type |
DDR DRAM
|
DDR2 DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
84
|
84
|
| Number of Words |
16777216 words
|
16777216 words
|
| Number of Words Code |
16000000
|
16000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
95 °C
|
| Operating Temperature-Min |
|
|
| Organization |
16MX16
|
16MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
TFBGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.12 mm
|
1.2 mm
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
| Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
OTHER
|
OTHER
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Pitch |
0.8 mm
|
0.8 mm
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
11.3 mm
|
11 mm
|
| Base Number Matches |
1
|
1
|
| Clock Frequency-Max (fCLK) |
|
350 MHz
|
| I/O Type |
|
COMMON
|
| Interleaved Burst Length |
|
4,8
|
| JESD-609 Code |
|
e1
|
| Moisture Sensitivity Level |
|
2
|
| Output Characteristics |
|
3-STATE
|
| Package Equivalence Code |
|
BGA84,9X15,32
|
| Refresh Cycles |
|
8192
|
| Sequential Burst Length |
|
4,8
|
| Supply Current-Max |
|
0.41 mA
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare EDE2516AASE-6E-E with alternatives
Compare K4N56163QF-ZC2A with alternatives