EGL41GHE3/96
vs
JAN1N5621US
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
VISHAY SEMICONDUCTORS
|
SENSITRON SEMICONDUCTOR
|
| Part Package Code |
DO-213AB
|
|
| Package Description |
O-PELF-R2
|
MELF-1, 2 PIN
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
FREE WHEELING DIODE, HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1.6 V
|
| JEDEC-95 Code |
DO-213AB
|
|
| JESD-30 Code |
O-PELF-R2
|
E-LELF-R2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
30 A
|
25 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
250
|
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Rep Pk Reverse Voltage-Max |
400 V
|
800 V
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.3 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Base Number Matches |
1
|
4
|
| Application |
|
FAST RECOVERY
|
| Reference Standard |
|
MIL-19500
|
| Reverse Current-Max |
|
0.5 µA
|
| Reverse Test Voltage |
|
800 V
|
|
|
|
Compare EGL41GHE3/96 with alternatives
Compare JAN1N5621US with alternatives