EGP30AZ vs 1N5400G feature comparison

EGP30AZ Galaxy Microelectronics

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1N5400G Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD DIODES INC
Package Description O-PALF-W2 PLASTIC PACKAGE-2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 1 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.05 µs 2 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 5
Pbfree Code No
Part Package Code DO-201AD
Pin Count 2
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

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