EGP30AZ vs EGP30A feature comparison

EGP30AZ Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

EGP30A Suzhou Good-Ark Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD GOOD-ARK ELECTRONICS CO LTD
Package Description O-PALF-W2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Application EFFICIENCY GENERAL PURPOSE
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.95 V 0.95 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount NO NO
Terminal Form WIRE
Terminal Position AXIAL
Base Number Matches 2 20

Compare EGP30AZ with alternatives

Compare EGP30A with alternatives