GBJ1006 vs LN6SB60 feature comparison

GBJ1006 Diodes Incorporated

Buy Now Datasheet

LN6SB60 Shindengen Electronic Manufacturing Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Package Description PLASTIC, GBJ, 4 PIN R-PSFM-T4
Pin Count 4 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Diodes Incorporated
Breakdown Voltage-Min 600 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.05 V 1.05 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
JESD-609 Code e0 e6
Non-rep Pk Forward Current-Max 170 A 170 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 10 A 2.8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 235
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn85Pb15) TIN BISMUTH
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Base Number Matches 2 5
Pbfree Code No
Additional Feature LOW NOISE
Moisture Sensitivity Level 2
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 5 µs
Reverse Test Voltage 600 V

Compare GBJ1006 with alternatives

Compare LN6SB60 with alternatives