GBJ1006 vs GSIB6A60N-M3/45 feature comparison

GBJ1006 Lite-On Semiconductor Corporation

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GSIB6A60N-M3/45 Vishay Semiconductors

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP VISHAY SEMICONDUCTORS
Package Description PLASTIC, GBJ, 4 PIN R-PSFM-T4
Pin Count 4 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 600 V 600 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.05 V 1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
Non-rep Pk Forward Current-Max 170 A 150 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 2.8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 255
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Manufacturer Package Code CASE GSIB-5S
JESD-609 Code e3
Terminal Finish MATTE TIN

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Compare GSIB6A60N-M3/45 with alternatives