GBJ1006 vs LN6SB60 feature comparison

GBJ1006 Lite-On Semiconductor Corporation

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LN6SB60 Shindengen Electronic Manufacturing Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP SHINDENGEN ELECTRIC MANUFACTURING CO LTD
Package Description PLASTIC, GBJ, 4 PIN R-PSFM-T4
Pin Count 4 4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 600 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.05 V 1.05 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
Non-rep Pk Forward Current-Max 170 A 170 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A 2.8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 255
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 5
Pbfree Code No
Additional Feature LOW NOISE
JESD-609 Code e6
Moisture Sensitivity Level 2
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 5 µs
Reverse Test Voltage 600 V
Terminal Finish TIN BISMUTH

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Compare LN6SB60 with alternatives