GBJ4M
vs
GBU4M
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
DIODES INC
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
|
| Breakdown Voltage-Min |
1000 V
|
1000 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
150 A
|
108 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
4 A
|
3.1 A
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
10
|
25
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PSFM-T4
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
4
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Reverse Current-Max |
|
5 µA
|
| Terminal Finish |
|
Matte Tin (Sn)
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
|
|
|
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