GBPC3500-T vs GBU35A feature comparison

GBPC3500-T Formosa Microsemi Co Ltd

Buy Now Datasheet

GBU35A Galaxy Microelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Contact Manufacturer
Ihs Manufacturer FORMOSA MICROSEMI CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 155 °C
Output Current-Max 35 A 35 A
Rep Pk Reverse Voltage-Max 50 V 50 V
Base Number Matches 1 1
Case Connection ISOLATED
Peak Reflow Temperature (Cel) 260
Surface Mount NO

Compare GBPC3500-T with alternatives

Compare GBU35A with alternatives