GBPC3510W vs GBPC3510-T feature comparison

GBPC3510W Galaxy Microelectronics

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GBPC3510-T Formosa Microsemi Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Base Number Matches 28 1
Package Description S-PUFM-D4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code S-PUFM-D4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style FLANGE MOUNT
Reference Standard UL RECOGNIZED
Terminal Form SOLDER LUG
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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