GBU801
vs
KBU802GT0
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
SILICON STANDARD CORP
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Breakdown Voltage-Min |
100 V
|
100 V
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
BRIDGE, 4 ELEMENTS
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
BRIDGE RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1 V
|
| Non-rep Pk Forward Current-Max |
200 A
|
200 A
|
| Number of Elements |
4
|
4
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Base Number Matches |
1
|
2
|
| HTS Code |
|
8541.10.00.80
|
| Case Connection |
|
ISOLATED
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PSFM-W4
|
| JESD-609 Code |
|
e3
|
| Number of Terminals |
|
4
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare GBU801 with alternatives
Compare KBU802GT0 with alternatives