GBU806 vs GBU8J feature comparison

GBU806 Galaxy Microelectronics

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GBU8J International Semiconductor Inc

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Rohs Code Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD INTERNATIONAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Base Number Matches 1 1
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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