GBU806 vs GBU806 feature comparison

GBU806 Taiwan Semiconductor

Buy Now Datasheet

GBU806 HY Electronic Corp

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD HY ELECTRONIC CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Factory Lead Time 6 Weeks
Samacsys Manufacturer Taiwan Semiconductor
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 8 A 3.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 800 V 600 V
Reverse Current-Max 5 µA 10 µA
Surface Mount NO NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Base Number Matches 17 4
Breakdown Voltage-Min 600 V
Reverse Test Voltage 600 V

Compare GBU806 with alternatives

Compare GBU806 with alternatives