GBU806 vs GBU806 feature comparison

GBU806 Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet

GBU806 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer YANGZHOU YANGJIE ELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
JESD-30 Code R-PSFM-T4 R-PSFM-T4
Non-rep Pk Forward Current-Max 175 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3.2 A 8 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 800 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 5 17
Factory Lead Time 6 Weeks
Samacsys Manufacturer Taiwan Semiconductor
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Terminal Finish TIN

Compare GBU806 with alternatives

Compare GBU806 with alternatives