GBU808 vs KBJ8K feature comparison

GBU808 Galaxy Microelectronics

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KBJ8K Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Base Number Matches 1 2
Package Description R-PSFM-T4
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
Moisture Sensitivity Level 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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