GBU808 vs GBU8K-M3/51 feature comparison

GBU808 Galaxy Semi-Conductor Co Ltd

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GBU8K-M3/51 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 3.9 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO
Base Number Matches 1 1
Package Description ROHS COMPLIANT, PLASTIC, CASE GBU, 4 PIN
Samacsys Manufacturer Vishay
Case Connection ISOLATED
Diode Element Material SILICON

Compare GBU808 with alternatives

Compare GBU8K-M3/51 with alternatives