GBU8A vs GBU8B feature comparison

GBU8A GeneSic Semiconductor Inc

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GBU8B Galaxy Semi-Conductor Co Ltd

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Pbfree Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer GENESIC SEMICONDUCTOR INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 50 V 100 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1 V
JESD-30 Code R-PSFM-T4
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Rep Pk Reverse Voltage-Max 50 V 100 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Base Number Matches 33 33
Rohs Code Yes
Peak Reflow Temperature (Cel) 260

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