GBU8K vs GBU8K/1 feature comparison

GBU8K Galaxy Semi-Conductor Co Ltd

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GBU8K/1 Vishay Intertechnologies

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Rohs Code Yes No
Part Life Cycle Code Active Active
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Base Number Matches 1 1
Package Description HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, GBU, 4 PIN
Case Connection ISOLATED

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