GBU8K vs KBU808 feature comparison

GBU8K Galaxy Semi-Conductor Co Ltd

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KBU808 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 200 A 300 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount NO NO
Base Number Matches 1 2
Package Description PLASTIC, KBU, 4 PIN
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
JESD-30 Code R-PSFM-T4
Moisture Sensitivity Level 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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