GBU8M vs GBU810 feature comparison

GBU8M Diotec Semiconductor AG

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GBU810 Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer DIOTEC SEMICONDUCTOR AG CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Diotec
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -50 °C
Output Current-Max 5.6 A 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 1.5 µs
Reverse Test Voltage 1000 V
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Base Number Matches 2 1
Breakdown Voltage-Min 1000 V

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