GBU8M vs GBU8B feature comparison

GBU8M Galaxy Microelectronics

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GBU8B Vishay Semiconductors

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99
Breakdown Voltage-Min 1000 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 100 V
Surface Mount NO NO
Base Number Matches 1 7
Package Description PLASTIC, CASE GBU, 4 PIN
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code R-PSFM-T4
JESD-609 Code e0
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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