GBU8M vs KBU8B-E4 feature comparison

GBU8M Galaxy Microelectronics

Buy Now Datasheet

KBU8B-E4 Vishay Intertechnologies

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99
Breakdown Voltage-Min 1000 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
Non-rep Pk Forward Current-Max 200 A 300 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 6 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 100 V
Surface Mount NO NO
Base Number Matches 1 2
Package Description PLASTIC, CASE KBU, 4 PIN
Samacsys Manufacturer Vishay
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code R-PSFM-W4
JESD-609 Code e4
Number of Terminals 4
Operating Temperature-Min -50 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish SILVER
Terminal Form WIRE
Terminal Position SINGLE

Compare GBU8M with alternatives

Compare KBU8B-E4 with alternatives