GBU8M
vs
FBI8A5M1
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
|
| Reach Compliance Code |
unknown
|
|
| ECCN Code |
EAR99
|
|
| Breakdown Voltage-Min |
1000 V
|
|
| Configuration |
BRIDGE, 4 ELEMENTS
|
|
| Diode Type |
BRIDGE RECTIFIER DIODE
|
|
| Forward Voltage-Max (VF) |
1.1 V
|
|
| Non-rep Pk Forward Current-Max |
200 A
|
|
| Number of Elements |
4
|
|
| Number of Phases |
1
|
|
| Operating Temperature-Max |
150 °C
|
|
| Output Current-Max |
8 A
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
|
| Surface Mount |
NO
|
|
| Base Number Matches |
1
|
|
|
|
|
Compare GBU8M with alternatives