GBU8M vs GBU8A feature comparison

GBU8M Galaxy Semi-Conductor Co Ltd

Buy Now Datasheet

GBU8A General Instrument Corp

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD GENERAL INSTRUMENT CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99
Breakdown Voltage-Min 1000 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 50 V
Surface Mount NO NO
Base Number Matches 1 1
Case Connection ISOLATED
Diode Element Material SILICON
JESD-30 Code R-PSIP-T4
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

Compare GBU8M with alternatives

Compare GBU8A with alternatives