GBU8M vs GBU8M feature comparison

GBU8M International Semiconductor Inc

Buy Now Datasheet

GBU8M Galaxy Microelectronics

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1 V
JESD-30 Code R-PSFM-T4
Non-rep Pk Forward Current-Max 200 A 200 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Output Current-Max 8 A 8 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Base Number Matches 1 1
Rohs Code Yes
Breakdown Voltage-Min 1000 V
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260

Compare GBU8M with alternatives

Compare GBU8M with alternatives