HGTP12N60A4 vs HGT1S5N120BNS9A feature comparison

HGTP12N60A4 Intersil Corporation

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HGT1S5N120BNS9A Fairchild Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 54 A 21 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE SINGLE
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 167 W 167 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 180 ns 357 ns
Turn-on Time-Nom (ton) 33 ns 35 ns
Base Number Matches 4 2
Package Description SMALL OUTLINE, R-PSSO-G2
Fall Time-Max (tf) 200 ns
Rise Time-Max (tr) 20 ns

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Compare HGT1S5N120BNS9A with alternatives