HSK277
vs
BA683
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HITACHI LTD
|
NXP SEMICONDUCTORS
|
| Package Description |
O-LELF-R2
|
GLASS, SMD, 2 PIN
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.60
|
8541.10.00.60
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Capacitance-Max |
1.2 pF
|
1.5 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
MIXER DIODE
|
MIXER DIODE
|
| Frequency Band |
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
|
VERY HIGH FREQUENCY
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.15 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Technology |
PLANAR DOPED BARRIER
|
SCHOTTKY
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
1
|
2
|
| Breakdown Voltage-Min |
|
35 V
|
| Forward Voltage-Max (VF) |
|
1 V
|
| Operating Temperature-Max |
|
150 °C
|
| Output Current-Max |
|
100 A
|
| Reverse Current-Max |
|
0.05 µA
|
|
|
|
Compare HSK277 with alternatives
Compare BA683 with alternatives