HSK277 vs BA683-T feature comparison

HSK277 Hitachi Ltd

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BA683-T NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HITACHI LTD NXP SEMICONDUCTORS
Package Description O-LELF-R2 O-LELF-R2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.60 8541.10.00.60
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance-Max 1.2 pF 1.5 pF
Diode Element Material SILICON SILICON
Diode Type MIXER DIODE MIXER DIODE
Frequency Band VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY
JESD-30 Code O-LELF-R2 O-LELF-R2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Technology PLANAR DOPED BARRIER SCHOTTKY
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 1
Breakdown Voltage-Min 35 V
Forward Voltage-Max (VF) 1 V
Operating Temperature-Max 150 °C
Output Current-Max 100 A
Reverse Current-Max 0.05 µA

Compare HSK277 with alternatives

Compare BA683-T with alternatives