HSU83TRF-E vs BAS321 feature comparison

HSU83TRF-E Renesas Electronics Corporation

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BAS321 Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer RENESAS TECHNOLOGY CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-G2 SOD-323, 2 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer Renesas Electronics
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e6
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.1 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.1 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN BISMUTH
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 4
Additional Feature LOW LEAKAGE CURRENT
Application FAST RECOVERY
Breakdown Voltage-Min 250 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 1.7 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 0.3 W
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 250 V
Reverse Current-Max 0.1 µA
Reverse Test Voltage 200 V

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