HUF75321D3S vs STP20NE06L feature comparison

HUF75321D3S Rochester Electronics LLC

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STP20NE06L STMicroelectronics

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Pbfree Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.036 Ω 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT APPLICABLE NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Rohs Code Yes
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 100 mJ
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 80 A

Compare HUF75321D3S with alternatives

Compare STP20NE06L with alternatives