HVC358B vs BB639CE6433 feature comparison

HVC358B Renesas Electronics Corporation

Buy Now Datasheet

BB639CE6433 Siemens

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer RENESAS ELECTRONICS CORP SIEMENS A G
Package Description R-PDSO-F2 R-PDSO-G2
Pin Count 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration SINGLE SINGLE
Diode Cap Tolerance 3.7%
Diode Capacitance Ratio-Min 2.2 13.5
Diode Capacitance-Nom 20.25 pF 39 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 15 V
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 20
Variable Capacitance Diode Classification ABRUPT
Base Number Matches 3 2
Additional Feature 2.5% MATCHED SETS AVAILABLE
Breakdown Voltage-Min 35 V
Frequency Band VERY HIGH FREQUENCY
Operating Temperature-Min -55 °C
Reverse Current-Max 0.01 µA
Reverse Test Voltage 30 V

Compare HVC358B with alternatives

Compare BB639CE6433 with alternatives