HVU350B vs 1SV277 feature comparison

HVU350B Renesas Electronics Corporation

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1SV277 Toshiba America Electronic Components

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Pbfree Code No No
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer RENESAS ELECTRONICS CORP TOSHIBA CORP
Package Description ULTRA SMALL, URP, 2 PIN R-PDSO-G2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Configuration SINGLE SINGLE
Diode Cap Tolerance 4.62% 10.11%
Diode Capacitance Ratio-Min 2.8 2
Diode Capacitance-Nom 16.25 pF 4.5 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 15 V 10 V
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 2 1
Part Package Code SOD
Samacsys Manufacturer Toshiba
Breakdown Voltage-Min 10 V
Frequency Band ULTRA HIGH FREQUENCY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 0.003 µA
Reverse Test Voltage 10 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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