HVU350BTRF
vs
HVC383B-E
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
HITACHI LTD
|
RENESAS TECHNOLOGY CORP
|
Package Description |
R-PDSO-G2
|
R-PDSO-F2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Breakdown Voltage-Min |
15 V
|
|
Configuration |
SINGLE
|
SINGLE
|
Diode Capacitance Ratio-Min |
2.8
|
2
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
JESD-30 Code |
R-PDSO-G2
|
R-PDSO-F2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Pin Count |
|
2
|
Diode Cap Tolerance |
|
5%
|
Diode Capacitance-Nom |
|
20 pF
|
JESD-609 Code |
|
e6
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Terminal Finish |
|
TIN BISMUTH
|
Time@Peak Reflow Temperature-Max (s) |
|
20
|
|
|
|
Compare HVU350BTRF with alternatives
Compare HVC383B-E with alternatives