IGP20N65H5XKSA1
vs
APT35GN120SG
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
| Package Description |
TO-220, 3 PIN
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
19 Weeks
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
42 A
|
94 A
|
| Collector-Emitter Voltage-Max |
650 V
|
1200 V
|
| Configuration |
SINGLE
|
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Min |
-40 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
POWER CONTROL
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Nom (toff) |
218 ns
|
|
| Turn-on Time-Nom (ton) |
28 ns
|
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
| Gate-Emitter Voltage-Max |
|
30 V
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
379 W
|
|
|
|
Compare IGP20N65H5XKSA1 with alternatives