IPD30N06S2L23ATMA3 vs STL34NF06 feature comparison

IPD30N06S2L23ATMA3 Infineon Technologies AG

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STL34NF06 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Package Description TO-252-3-11, 3/2 PIN CHIP CARRIER, S-XQCC-N5
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks, 4 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 150 mJ 250 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 30 A 34 A
Drain-source On Resistance-Max 0.03 Ω 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 S-XQCC-N5
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 136 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN LEAD
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE QUAD
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pin Count 5
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 70 W
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPD30N06S2L23ATMA3 with alternatives

Compare STL34NF06 with alternatives