IPD640N06LGBTMA1 vs IRL5NJ024 feature comparison

IPD640N06LGBTMA1 Infineon Technologies AG

Buy Now Datasheet

IRL5NJ024 Infineon Technologies AG

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Pbfree Code No
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2 CHIP CARRIER, R-CBCC-N3
Pin Count 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 43 mJ 56 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 18 A 17 A
Drain-source On Resistance-Max 0.064 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-CBCC-N3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 72 A 68 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Power Dissipation-Max (Abs) 35 W

Compare IPD640N06LGBTMA1 with alternatives

Compare IRL5NJ024 with alternatives