Part Details for IRL5NJ024 by Infineon Technologies AG
Overview of IRL5NJ024 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRL5NJ024
Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | HEXFET, HiRel, Gen 5, Logic Level EAR99 55V, 17A, 0.060 ohm RoHS: Not Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Bag | 0Bag |
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$204.7700 / $215.0100 | Buy Now |
DISTI #
C1S322002816334
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Chip1Stop | MOSFET RoHS: Not Compliant | 86 |
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$199.6170 / $207.7820 | Buy Now |
Part Details for IRL5NJ024
IRL5NJ024 CAD Models
IRL5NJ024 Part Data Attributes
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IRL5NJ024
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL5NJ024
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CHIP CARRIER, R-CBCC-N3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 56 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-CBCC-N3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 35 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRL5NJ024
This table gives cross-reference parts and alternative options found for IRL5NJ024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL5NJ024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFZ24NPBF | 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IRL5NJ024 vs IRFZ24NPBF |
RFD12N06RLESM9A_NL | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | IRL5NJ024 vs RFD12N06RLESM9A_NL |
IRL5NJ024SCX | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | IRL5NJ024 vs IRL5NJ024SCX |
IRL5NJ024SCV | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD0.5, 3 PIN | Infineon Technologies AG | IRL5NJ024 vs IRL5NJ024SCV |
NTDV18N06LT4G | Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL, Automotive Qualified | onsemi | IRL5NJ024 vs NTDV18N06LT4G |
SHD220213 | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-5 | Sensitron Semiconductors | IRL5NJ024 vs SHD220213 |
SHDC220213 | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-5 | Sensitron Semiconductors | IRL5NJ024 vs SHDC220213 |